Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers
| Title: | Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers |
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| Authors: | Satter, M. M.; Kim, H.-J.; Lochner, Z.; Ryou, J.-H.; Shen, S.-C.; Dupuis, R. D.; Yoder, P. D. |
| Source: | IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 48(5):703-711 May, 2012 |
| Database: | IEEE Xplore Digital Library |