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Towards the Monolithic Integration of III-V Compound Semiconductors on Si: Selective Area Growth in High Aspect Ratio Structures vs. Strain Relaxed Buffer-Mediated Epitaxy

Title: Towards the Monolithic Integration of III-V Compound Semiconductors on Si: Selective Area Growth in High Aspect Ratio Structures vs. Strain Relaxed Buffer-Mediated Epitaxy
Authors: Cantoro, M.; Merckling, C.; Jiang, S.; Guo, W.; Waldron, N.; Bender, H.; Moussa, A.; Douhard, B.; Vandervorst, W.; Heyns, M. M.; Dekoster, J.; Loo, R.; Caymax, M.
Source: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2012 IEEE. :1-4 Oct, 2012
Relation: 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Database: IEEE Xplore Digital Library