High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
| Title: | High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer |
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| Authors: | Sharma, Y. K.; Ahyi, A. C.; Isaacs-Smith, T.; Modic, A.; Park, M.; Xu, Y.; Garfunkel, E. L.; Dhar, S.; Feldman, L. C.; Williams, J. R. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(2):175-177 Feb, 2013 |
| Database: | IEEE Xplore Digital Library |