Modeling of ultra-low energy boron implantation in silicon
| Title: | Modeling of ultra-low energy boron implantation in silicon |
|---|---|
| Authors: | Hobler, G.; Vuong, H.-H.; Bevk, J.; Agarwal, A.; Gossmann, H.-J.; Jacobson, D.C.; Foad, M.; Murrell, A.; Erokhin, Y. |
| Source: | International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :489-492 1997 |
| Relation: | International Electron Devices Meeting. IEDM Technical Digest |
| Database: | IEEE Xplore Digital Library |