Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$
| Title: | Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$ |
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| Authors: | Lee, D. S.; Wang, H.; Hsu, A.; Azize, M.; Laboutin, O.; Cao, Y.; Johnson, J. W.; Beam, E.; Ketterson, A.; Schuette, M. L.; Saunier, P.; Palacios, T. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 34(8):969-971 Aug, 2013 |
| Database: | IEEE Xplore Digital Library |