The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
| Title: | The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices |
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| Authors: | Morgan, Katrina A.; Huang, Ruomeng; Pearce, Stuart; De Groot, C. H. |
| Source: | 2014 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2014 IEEE International Symposium on. :432-435 Jun, 2014 |
| Relation: | 2014 IEEE International Symposium on Circuits and Systems (ISCAS) |
| Database: | IEEE Xplore Digital Library |