| Title: |
Dopant activation and crystal recovery in arsenic-implanted ultra-thin silicon-on-insulator structures using 308nm nanosecond laser annealing |
| Authors: |
Kerdiles, S.; Alba, P. Acosta; Mathieu, B.; Veillerot, M.; Kachtouli, R.; Besson, P.; Denis, H.; Mazzamuto, F.; Toque-Tresonne, I.; Huet, K.; Fenouillet-Beranger, C. |
| Source: |
2016 16th International Workshop on Junction Technology (IWJT) Junction Technology (IWJT), 2016 16th International Workshop on. :72-75 May, 2016 |
| Relation: |
2016 16th International Workshop on Junction Technology (IWJT) |
| Database: |
IEEE Xplore Digital Library |