| Title: |
Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance |
| Authors: |
Posthuma, N. E.; You, S.; Liang, H.; Ronchi, N.; Kang, X.; Wellekens, D.; Saripalli, Y. N.; Decoutere, S. |
| Source: |
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :95-98 Jun, 2016 |
| Relation: |
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |