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Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells

Title: Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells
Authors: Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Torrens, G.; Bota, S.A.; Segura, J.; Moll, F.; Rubio, A.
Source: 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017 14th International Conference on. :1-4 Jun, 2017
Relation: 2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)
Database: IEEE Xplore Digital Library