PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms
| Title: | PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms |
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| Authors: | Tallarico, A.N.; Stoffels, S.; Posthuma, N.; Magnone, P.; Marcon, D.; Decoutere, S.; Sangiorgi, E.; Fiegna, C. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(1):38-44 Jan, 2018 |
| Database: | IEEE Xplore Digital Library |