| Title: |
Electron-volt, high current implants into silicon SDR (Surface damage region) and the effect of anneal time to form 200 to 700 angstrom, low leakage junctions |
| Authors: |
Moffatt, S.; Murrell, A.; De Cock, G.; Armour, D.; Foad, M.; Collart, E. |
| Source: |
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:682-685 vol.2 1998 |
| Relation: |
1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 |
| Database: |
IEEE Xplore Digital Library |