| Title: |
The effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: kinetic Monte Carlo simulations |
| Authors: |
Caturla, M.J.; Foad, M.; Daiz de la Rubia, T. |
| Source: |
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:1018-1021 vol.2 1998 |
| Relation: |
1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 |
| Database: |
IEEE Xplore Digital Library |