Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs
| Title: | Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs |
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| Authors: | Borga, M.; Meneghini, M.; Stoffels, S.; Li, X.; Posthuma, N.; Van Hove, M.; Decoutere, S.; Meneghesso, G.; Zanoni, E. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(7):2765-2770 Jul, 2018 |
| Database: | IEEE Xplore Digital Library |