Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels
| Title: | Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels |
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| Authors: | Szabo, A.; Klinkert, C.; Campi, D.; Stieger, C.; Marzari, N.; Luisier, M. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(10):4180-4187 Oct, 2018 |
| Database: | IEEE Xplore Digital Library |