| Title: |
Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications |
| Authors: |
Posthuma, N. E.; You, S.; Stoffels, S.; Liang, H.; Zhao, M.; Decoutere, S. |
| Source: |
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :188-191 May, 2018 |
| Relation: |
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |