| Title: |
An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology |
| Authors: |
Posthuma, N. E.; You, S.; Stoffels, S.; Wellekens, D.; Liang, H.; Zhao, M.; De Jaeger, B.; Geens, K.; Ronchi, N.; Decoutere, S.; Moens, P.; Banerjee, A.; Ziad, H.; Tack, M. |
| Source: |
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :284-287 May, 2018 |
| Relation: |
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |