| Title: |
3-D Sequential Stacked Planar Devices Featuring Low-Temperature Replacement Metal Gate Junctionless Top Devices With Improved Reliability |
| Authors: |
Vandooren, A.; Franco, J.; Parvais, B.; Wu, Z.; Witters, L.; Walke, A.; Li, W.; Peng, L.; Deshpande, V.; Bufler, F.M.; Rassoul, N.; Hellings, G.; Jamieson, G.; Inoue, F.; Verbinnen, G.; Devriendt, K.; Teugels, L.; Heylen, N.; Vecchio, E.; Zheng, T.; Rosseel, E.; Vanherle, W.; Hikavyy, A.; Chan, B.T.; Ritzenthaler, R.; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, I.; Nguyen, B.; Waldron, N.; De Heyn, V.; Mocuta, D.; Collaert, N. |
| Source: |
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(11):5165-5171 Nov, 2018 |
| Database: |
IEEE Xplore Digital Library |