| Title: |
3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability |
| Authors: |
Vandooren, A.; Franco, J.; Parvais, B.; Wu, Z.; Witters, L.; Walke, A.; Li, W.; Peng, L.; Desphande, V.; Bufler, F.M.; Rassoul, N.; Hellings, G.; Jamieson, G.; Inoue, F.; Verbinnen, G.; Devriendt, K.; Teugels, L.; Heylen, N.; Vecchio, E.; Zheng, T.; Rosseel, E.; Vanherle, W.; Hikavyy, A.; Chan, B. T.; Ritzenthaler, R.; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, I.; Nguyen, B.-Y.; Waldron, N.; Heyn, V. De; Mocuta, D.; Collaert, N. |
| Source: |
2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :69-70 Jun, 2018 |
| Relation: |
2018 IEEE Symposium on VLSI Technology |
| Database: |
IEEE Xplore Digital Library |