| Title: |
Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier |
| Authors: |
Lechner, B.; Huang, Y.; Wachutka, G. |
| Source: |
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Advanced Semiconductor Devices and Microsystems (ASDAM), 2018 12th International Conference on. :1-4 Oct, 2018 |
| Relation: |
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) |
| Database: |
IEEE Xplore Digital Library |