Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation
| Title: | Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation |
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| Authors: | Tallarico, A.N.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(4):518-521 Apr, 2019 |
| Database: | IEEE Xplore Digital Library |