Katalog Plus
Bibliothek der Frankfurt UAS
Bald neuer Katalog: sichern Sie sich schon vorab Ihre persönlichen Merklisten im Nutzerkonto: Anleitung.
Dieses Ergebnis aus IEEE Xplore Digital Library kann Gästen nicht angezeigt werden.  Login für vollen Zugriff.

13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V

Title: 13.2 A 3.6Mb 10.1Mb/mm2 Embedded Non-Volatile ReRAM Macro in 22nm FinFET Technology with Adaptive Forming/Set/Reset Schemes Yielding Down to 0.5V with Sensing Time of 5ns at 0.7V
Authors: Jain, Pulkit; Arslan, Umut; Sekhar, Meenakshi; Lin, Blake C.; Wei, Liqiong; Sahu, Tanaya; Alzate-vinasco, Juan; Vangapaty, Ajay; Meterelliyoz, Mesut; Strutt, Nathan; Chen, Albert B.; Hentges, Patrick; Quintero, Pedro A.; Connor, Chris; Golonzka, Oleg; Fischer, Kevin; Hamzaoglu, Fatih
Source: 2019 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2019 IEEE International. :212-214 Feb, 2019
Relation: 2019 IEEE International Solid-State Circuits Conference - (ISSCC)
Database: IEEE Xplore Digital Library