| Title: |
High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform |
| Authors: |
Wong, Roy K.-Y.; Chiu, H. C.; Zhang, J. H.; Zhou, C.; Zhao, Thomas; Wu, Y. B.; Liao, Henry; He, Simon; Zhang, A. B.; Zou, Y.B.; Li, Seiya; Zhang, Martin; Wu, Macro; Lee, John; Chen, P.W.; Xie, Andy; Zhang, Jeff |
| Source: |
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :67-70 May, 2019 |
| Relation: |
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |