| Title: |
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG |
| Authors: |
Capogreco, E.; Arimura, H.; Witters, L.; Vohra, A.; Porret, C.; Loo, R.; De Keersgieter, A.; Dupuy, E.; Marinov, D.; Hikavyy, A.; Sebaai, F.; Mannaert, G.; Ragnarsson, L.-A.; Siew, Y. K.; Vrancken, C.; Opdebeeck, A.; Mitard, J.; Langer, R.; Sanchez, E. Altamirano; Holstetns, F.; Demuynck, S.; Barla, K.; De Heyn, V.; Mocuta, D.; Collaert, N.; Horiguchi, N. |
| Source: |
2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T94-T95 Jun, 2019 |
| Relation: |
2019 Symposium on VLSI Technology |
| Database: |
IEEE Xplore Digital Library |