Gate Reliability of p-GaN HEMT With Gate Metal Retraction
| Title: | Gate Reliability of p-GaN HEMT With Gate Metal Retraction |
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| Authors: | Tallarico, A.N.; Stoffels, S.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Sangiorgi, E.; Fiegna, C. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(11):4829-4835 Nov, 2019 |
| Database: | IEEE Xplore Digital Library |