Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >108 On/Off Ratio
| Title: | Doping-Induced Schottky-Barrier Realignment for Unipolar and High Hole Current WSe2 Devices With >108 On/Off Ratio |
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| Authors: | Pang, C.; Hung, T.Y.; Khosravi, A.; Addou, R.; Wallace, R.M.; Chen, Z. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(7):1122-1125 Jul, 2020 |
| Database: | IEEE Xplore Digital Library |