| Title: |
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology |
| Authors: |
Higuchi, Tsutomu; Kodama, Takuyo; Kato, Koji; Fukuda, Ryo; Tokiwa, Naoya; Abe, Mitsuhiro; Takagiwa, Teruo; Shimizu, Yuki; Musha, Junji; Sakurai, Katsuaki; Sato, Jumpei; Utsumi, Tetsuaki; Yoneya, Kazuhide; Suematsu, Yasuhiro; Hashimoto, Toshifumi; Hioka, Takeshi; Yanagidaira, Kosuke; Kojima, Masatsugu; Matsuno, Junya; Shiraishi, Kei; Yamamoto, Kensuke; Hayashi, Shintaro; Hashiguchi, Tomoharu; Inuzuka, Kazuko; Sugahara, Akio; Honma, Mitsuaki; Tsunoda, Keiji; Yamamoto, Kazumasa; Sugimoto, Takahiro; Fujimura, Tomofumi; Kaneko, Mizuki; Date, Hiroki; Kobayashi, Osamu; Minamoto, Takatoshi; Tachibana, Ryoichi; Yamaguchi, Itaru; Lee, Juan; Ramachandra, Venky; Rajendra, Srinivas; Tang, Tianyu; Darne, Siddhesh; Lee, Jiwang; Li, Jason; Miwa, Toru; Yamashita, Ryuji; Sugawara, Hiroshi; Ookuma, Naoki; Kano, Masahiro; Mizukoshi, Hiroyuki; Kuniyoshi, Yuki; Watanabe, Mitsuyuki; Akiyama, Kei; Mori, Hirotoshi; Arimizu, Akira; Katano, Yoshito; Ehama, Masakazu; Maejima, Hiroshi; Hosono, Koji; Yoshihara, Masahiro |
| Source: |
2021 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2021 IEEE International. 64:428-430 Feb, 2021 |
| Relation: |
2021 IEEE International Solid-State Circuits Conference (ISSCC) |
| Database: |
IEEE Xplore Digital Library |