A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
| Title: | A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs |
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| Authors: | Modolo, N.; De Santi, C.; Minetto, A.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 42(5):673-676 May, 2021 |
| Database: | IEEE Xplore Digital Library |