First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices
| Title: | First Demonstration of Ruthenium and Molybdenum Word lines Integrated into 40nm Pitch 3D-NAND Memory Devices |
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| Authors: | Ajaykumar, A.; Breuil, L.; Katcko, K.; Schleicher, F.; Sebaai, F.; Oniki, Y.; Ramesh, S.; Arreghini, A.; Nyns, L.; Soulie, J. -P.; Stiers, J.; den Bosch, G. Van; Rosmeulen, M. |
| Source: | 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021 |
| Relation: | 2021 Symposium on VLSI Technology |
| Database: | IEEE Xplore Digital Library |