High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs
| Title: | High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs |
|---|---|
| Authors: | Millesimo, M.; Fiegna, C.; Posthuma, N.; Borga, M.; Bakeroot, B.; Decoutere, S.; Tallarico, A.N. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(11):5701-5706 Nov, 2021 |
| Database: | IEEE Xplore Digital Library |