| Title: |
Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET |
| Authors: |
Zhu, Shengnan; Liu, Tianshi; Shi, Limeng; Jin, Michael; Maddi, Hema Lata Rao; White, Marvin H.; Agarwal, Anant K. |
| Source: |
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2021 IEEE 8th Workshop on. :1-4 Nov, 2021 |
| Relation: |
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) |
| Database: |
IEEE Xplore Digital Library |