| Title: |
FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory |
| Authors: |
Chang, S. -C.; Haratipour, N.; Shivaraman, S.; Neumann, C.; Atanasov, S.; Peck, J.; Kabir, N.; Tung, I. -C.; Liu, H.; Krist, B.; Oni, A.; Sung, S.; Doyle, B.; Allen, G.; Engel, C.; Roy, A.; Hoff, T.; Li, H.; Hamzaoglu, F.; Bristol, R.; Radosavljevic, M.; Turkot, B.; Metz, M.; Young, I.; Kavalieros, J.; Avci, U. |
| Source: |
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :33.2.1-33.2.4 Dec, 2021 |
| Relation: |
2021 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |