| Title: |
Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices |
| Authors: |
Jagannathan, H.; Anderson, B.; Sohn, C-W.; Tsutsui, G.; Strane, J.; Xie, R.; Fan, S.; Kim, K-I.; Song, S.; Sieg, S.; Seshadri, I.; Mochizuki, S.; Wang, J.; Rahman, A.; Cheon, K-Y.; Hwang, I.; Demarest, J.; Do, J.; Fullam, J.; Jo, G.; Hong, B.; Jung, Y.; Kim, M.; Kim, S.; Lallement, R.; Levin, T.; Li, J.; Miller, E.; Montanini, P.; Pujari, R.; Osborn, C.; Sankarapandian, M.; Son, G-H.; Waskiewicz, C.; Wu, H.; Yim, J.; Young, A.; Zhang, C.; Varghese, A.; Robison, R.; Burns, S.; Zhao, K.; Yamashita, T.; Dechene, D.; Guo, D.; Divakaruni, R.; Wu, T.; Seo, K-I.; Bu, H. |
| Source: |
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :26.1.1-26.1.4 Dec, 2021 |
| Relation: |
2021 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |