| Title: |
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier |
| Authors: |
Gao, Z.; Chiocchetta, F.; De Santi, C.; Modolo, N.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Blanck, H.; Stieglauer, H.; Sommer, D.; Benoit, L.; Grunenputt, J.; Kordina, O.; Chen, Jr-Tai.; Jacquet, J-C; Lacam, C.; Piotrowicz, S. |
| Source: |
2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :P51-1-P51-6 Mar, 2022 |
| Relation: |
2022 IEEE International Reliability Physics Symposium (IRPS) |
| Database: |
IEEE Xplore Digital Library |