Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition
| Title: | Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition |
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| Authors: | Millesimo, M.; Bakeroot, B.; Borga, M.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. |
| Source: | 2022 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2022 IEEE International. :10B.2-1-10B.2-6 Mar, 2022 |
| Relation: | 2022 IEEE International Reliability Physics Symposium (IRPS) |
| Database: | IEEE Xplore Digital Library |