| Title: |
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture |
| Authors: |
Le Royer, C.; Mohamad, B.; Biscarrat, J.; Vauche, L.; Escoffier, R.; Buckley, J.; Becu, S.; Riat, R.; Gillot, C.; Charles, M.; Ruel, S.; Pimenta-Barros, P.; Posseme, N.; Besson, P.; Boudaa, F.; Vannuffel, C.; Vandendaele, W.; Viey, A.G.; Krakovinsky, A.; Jaud, M.-A.; Modica, R.; Iucolano, F.; Tiec, R. Le; Levi, S.; Orsatelli, M.; Gwoziecki, R.; Sousa, V. |
| Source: |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :49-52 May, 2022 |
| Relation: |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |