| Title: |
Source engineering on Oxygen-Inserted Si channel for gate length scaling of low-voltage switch devices |
| Authors: |
Chen, Yi-Ann; Hong, Changsoo; Li, Shuyi; Raol, Abhishek; Burton, Richard; Duane, Michael; Hutter, Lou N.; Takeuchi, Hideki; Mears, Robert J. |
| Source: |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :197-200 May, 2022 |
| Relation: |
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Database: |
IEEE Xplore Digital Library |