| Title: |
High performance 100 nm T-gate strained Si/Si/sub 0.6/Ge/sub 0.4/ n-MODFET |
| Authors: |
Aniel, F.; Enciso-Aguilar, M.; Giguerre, L.; Crozat, P.; Adde, R.; Mack, T.; Seiler, U.; Hackbarth, Th.; Raynor, B. |
| Source: |
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) Semiconductor device research Semiconductor Device Research Symposium, 2001 International. :482-485 2001 |
| Relation: |
2001 International Semiconductor Device Research Symposium. Symposium Proceedings |
| Database: |
IEEE Xplore Digital Library |