The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
| Title: | The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs |
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| Authors: | Millesimo, M.; Borga, M.; Bakeroot, B.; Posthuma, N.; Decoutere, S.; Sangiorgi, E.; Fiegna, C.; Tallarico, A.N. |
| Source: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 43(11):1846-1849 Nov, 2022 |
| Database: | IEEE Xplore Digital Library |