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III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

Title: III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Authors: Vais, A.; Yadav, S.; Mols, Y.; Vermeersch, B.; Kodandarama, K. V.; Baryshnikova, M.; Mannaert, G.; Alcotte, R.; Boccardi, G.; Wambacq, P.; Parvais, B.; Langer, R.; Kunert, B.; Collaert, N.
Source: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :261-264 Sep, 2022
Relation: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
Database: IEEE Xplore Digital Library