Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films
| Title: | Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films |
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| Authors: | Sergeeva, O. N.Aff1, Aff2, IDS1063783419120485_cor1; Solnyshkin, A. V.Aff1, Aff2; Kiselev, D. A.Aff2, Aff3; Il’ina, T. S.Aff3; Kukushkin, S. A.Aff2, Aff4; Sharofidinov, Sh. Sh.Aff2, Aff5; Kaptelov, E. Yu.Aff2, Aff5; Pronin, I. P.Aff2, Aff5 |
| Source: | Physics of the Solid State. 61(12):2386-2391 |
| Database: | Springer Nature Journals |