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1
Front-side Integration of Middle-of-line Stacked Contacts for Monolithic CFET

von Vega-Gonzalez, V. ; Stiers, K. ; Sheng, C. ; et al.

2024 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2024 IEEE International. :1-3 Jun, 2024
- Zum Volltext in IEEE Xplore
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2
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

von Vais, A. ; Yadav, S. ; Mols, Y. ; et al.

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :261-264 Sep, 2022
- Zum Volltext in IEEE Xplore
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3
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

von Veloso, A. ; Jourdain, A. ; Radisic, D. ; et al.

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(12):7173-7179 Dec, 2022
- Zum Volltext in IEEE Xplore
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4
Plasma Charging Damage in HK-First and HK-Last RMG NMOS Devices

von Hiblot, G. ; Parihar, N. ; Dupuy, E. ; et al.

IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 21(2):192-198 Jun, 2021
- Zum Volltext in IEEE Xplore
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5
Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning

von Mertens, H. ; Hosseini, M. ; Chiarella, T. ; et al.

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
- Zum Volltext in IEEE Xplore
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6
Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling

von Gupta, A. ; Pedreira, O.V. ; Arutchelvan, G. ; et al.

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(12):5349-5354 Dec, 2020
- Zum Volltext in IEEE Xplore
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7
Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections

von Vandooren, A. ; Parihar, N. ; Franco, J. ; et al.

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :330-331 Jun, 2022
- Zum Volltext in IEEE Xplore
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8
Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

von Mertens, H. ; Ritzenthaler, R. ; Oniki, Y. ; et al.

2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :23.1.1-23.1.4 Dec, 2022
- Zum Volltext in IEEE Xplore
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9
Long-term Outcome of the Dutch Common Channel Trial (DUCATI): Preservation of Superior Weight Loss Results Without Significant Malnutrition Side Effects

von Gadiot, Ralph P. M. ; Biter, L. Ulas ; Feskens, Pierre G. ; et al.

Obesity Surgery: The Journal of Metabolic Surgery and Allied Care. 34(11):4136-4145
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10
Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space

von Mertens, H. ; Ritzenthaler, R. ; Oniki, Y. ; et al.

2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
- Zum Volltext in IEEE Xplore
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11
Enabling Logic with Backside Connectivity via n-TSVs and its Potential as a Scaling Booster

von Veloso, A. ; Jourdain, A. ; Hiblot, G. ; et al.

2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
- Zum Volltext in IEEE Xplore
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12
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories

von Ritzenthaler, R. ; Capogreco, E. ; Dupuy, E. ; et al.

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :306-307 Jun, 2022
- Zum Volltext in IEEE Xplore
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13
Comparison of Electrical Performance of Co-Integrated Forksheets and Nanosheets Transistors for the 2nm Technological Node and Beyond

von Ritzenthaler, R. ; Mertens, H. ; Eneman, G. ; et al.

2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :26.2.1-26.2.4 Dec, 2021
- Zum Volltext in IEEE Xplore
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14
3D Sequential Low Temperature Top Tier Devices using Dopant Activation with Excimer Laser Anneal and Strained Silicon as Performance Boosters

von Vandooren, A. ; Wu, Z. ; Parihar, N. ; et al.

2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
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15
First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

von Subramanian, S. ; Hosseini, M. ; Chiarella, T. ; et al.

2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
- Zum Volltext in IEEE Xplore
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16
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node

von Gupta, A. ; Mertens, H. ; Tao, Z. ; et al.

2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
- Zum Volltext in IEEE Xplore
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17
Synthetic Elastography using B-mode Ultrasound through a Deep Fully-Convolutional Neural Network

von Wildeboer, R. R. ; van Sloun, R. J. G. ; Mannaerts, C. K. ; et al.

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2020

Schlagworte: Electrical Engineering and Systems Science - Image and Video Processing; Computer Science - Computer Vision and Pattern Recognition
- View full text via Arxiv
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18
Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

von Chew, S-A. ; Yu, H. ; Schaekers, M. ; et al.

2017 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2017 IEEE International. :1-3 May, 2017
- Zum Volltext in IEEE Xplore
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19
High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

von Capogreco, E. ; Arimura, H. ; Witters, L. ; et al.

2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T94-T95 Jun, 2019
- Zum Volltext in IEEE Xplore
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20
Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates

von De Jaeger, B. ; Van Hove, M. ; Wellekens, D. ; et al.

2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :49-52 Jun, 2012
- Zum Volltext in IEEE Xplore
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21
First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

von Vais, A. ; Witters, L. ; Mols, Y. ; et al.

2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :9.1.1-9.1.4 Dec, 2019
- Zum Volltext in IEEE Xplore
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22
Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization

von Ritzenthaler, R. ; Mertens, H. ; Pena, V. ; et al.

2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :21.5.1-21.5.4 Dec, 2018
- Zum Volltext in IEEE Xplore
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23
Laparoscopic peritoneal lavage versus sigmoidectomy for perforated diverticulitis with purulent peritonitis: three-year follow-up of the randomised LOLA trial

von Hoek, Vincent T. ; Edomskis, Pim P. ; Stark, Pieter W. ; et al.

Surgical Endoscopy: And Other Interventional Techniques. 36(10):7764-7774
- Zum Volltext (via ReDI)
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24
First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

von Vandooren, A. ; Franco, J. ; Wu, Z. ; et al.

2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :7.1.1-7.1.4 Dec, 2018
- Zum Volltext in IEEE Xplore
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25
Incidence and severity of ovarian hyperstimulation syndrome (OHSS) in high responders after gonadotropin-releasing hormone (GnRH) agonist trigger in 'freeze-all' approach

von M. Fernández-Sánchez ; H. Fatemi ; J. A. García-Velasco ; et al.

Gynecological Endocrinology, Vol 39, Iss 1 (2023)

Schlagworte: Risk of OHSS; triptorelin; preventive measures; GnRH agonist triggering; high responders; freeze-all approach; Gynecology and obstetrics; RG1-991; Diseases of the endocrine glands. Clinical endocrinology; RC648-665
- View full text via DOI
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